Ultrasensitive broadband phototransistors based on perovskite/organic-semiconductor vertical heterojunctions

Jones in a broadband region from the ultraviolet to the near infrared. The high sensitivity of the devices is attributed to a pronounced photogating effect that is mainly due to the long carrier lifetimes and strong light absorption in the perovskite material. In addition, flexible perovskite photodetectors have been successfully prepared via a solution process and show high sensitivity as well as excellent flexibility and bending durability. The high performance and facile solution-based fabrication of the perovskite/organic-semiconductor phototransistors indicate their promise for potential application for ultrasensitive broadband photodetection.