To explore the stability of antisymmetric magnetoresistance in Fe3GaTe2/InSe/Fe3GaTe2 van der Waals heterostructures.
Analyzed Fe3GaTe2/InSe/Fe3GaTe2 van der Waals heterostructures for their magnetoresistance properties.
Evaluated compatibility with complementary metal-oxide-semiconductor circuits.
Demonstrated stable antisymmetric magnetoresistance in heterostructures.
Found compatibility with complementary metal-oxide-semiconductor circuits for memory applications.
Abstract
and InSe, making them highly compatible with complementary metal-oxide-semiconductor circuits. This work lays a solid foundation for future stable multi-state memory applications.