Oxygen-vacancy defect dipoles in Nb-doped SrTiO 3 trap free electrons, tuned by doping and annealing. Oxygen-annealed SrNb 0.5% Ti 99.5% O 3 forms more dipoles, achieving ε r = 63 217 and tan δ = 0.0208 at 1 kHz. This guides high-performance SrTiO 3 dielectrics.
Wang et al. (Thu,) studied this question.