Manipulating Charge‐Mechanical Coupling to Achieve Superior Ductility and High Thermoelectric Properties in Layered Bismuth Telluride

simultaneously achieves a high peak dimensionless figure of merit (zT) of 1.23 at 350 K. This work reveals how electronic states can be harnessed to tune plasticity in layered semiconductors and provides a general strategy for synergistically enhancing mechanical flexibility and thermoelectric efficiency.