We have fabricated metals (Au/Pt/Ti) Ohmic contacts on mesa structures of boron-doped homoepitaxial diamond films by metal deposition followed by various thermal annealing processes. Specific contact resistance was determined by characterizing the current?voltage relations from transmission line model (TLM) measurement. The lowest specific contact resistance of 1.3 ? 10?5 ? cm2 at room temperature was obtained after 873 K annealing. The temperature dependence of the specific contact resistance of the (Au/Pt/Ti)/diamond contacts has confirmed the thermal stability of the contacts.
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Chen et al. (2005) studied this question.
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