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February 11, 2010IEEE Electron Device Letters

Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate

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KIKi‐Sik ImTech University of KoreaJHJong‐Bong HaSamsung (South Korea)KKKi-Won KimElectronics and Telecommunications Research Institute

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Im et al. (2010) studied this question.

synapsesocial.com/papers/6a00d632f9e1acab462d75fchttps://doi.org/10.1109/led.2009.2039024
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