Materials study demonstrates low-voltage thermal switching in antiferroelectric PbZrO3 thin films, highlighting a new mechanism for active thermal transport control.
) thermal switching under a small voltage (<10 V). In situ reciprocal space mapping and atomistic modelings reveal that the field-driven antiferroelectric-ferroelectric phase transition induces a substantial change of primitive cell size, which modulates phonon-phonon scattering phase space drastically and results in high switching ratio. These results advance the concept of thermal transport control in ferroic materials.
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Liu et al. (2023) studied this question.
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