Single crystal (−201) β-Ga 2 O 3 substrates doped with Si and Sn have been thermally annealed in N 2 and O 2 atmospheres. Structural and electrical properties evaluation was performed via a number of experimental methods in order to quantify the effects of the doping and annealing ambient on the properties of these samples. All samples annealed in O 2 exhibited significantly lower carrier concentration, as determined by capacitance–voltage measurements. Schottky barrier diodes exhibited excellent rectification when the Ga 2 O 3 was annealed in N 2 , and significantly lower forward current using O 2 -annealed Ga 2 O 3 substrates. Deep level transient spectroscopy revealed four deep trap levels with activation energies in the range of 0.40–1.07 eV. Electron spin resonance showed a decrease in shallow donor concentration, and cathodoluminescence spectroscopy revealed nearly two orders of magnitude lower emission intensity in O 2 -annealed Ga 2 O 3 samples. Raman spectroscopy revealed a carrier concentration dependent Raman mode around 254 cm −1 observed only when the final anneal of (−201) β-Ga 2 O 3 was not done in O 2 . Secondary ion mass spectroscopy measurements revealed diffusion of unintentional Fe towards the surface of the (−201) Ga 2 O 3 samples after annealing in O 2 . Depth resolved positron annihilation spectroscopy showed an increased density of vacancy defects in the bulk region of O 2 -annealed Ga 2 O 3 substrates.
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Tadjer et al. (2020) studied this question.
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