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December 14, 2005Reports on Progress in Physics

High dielectric constant gate oxides for metal oxide Si transistors

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John Robertson
John RobertsonUniversité Paris-Sud

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John Robertson (2005) studied this question.

synapsesocial.com/papers/6a01bd2c8d267ec217d8ba65https://doi.org/10.1088/0034-4885/69/2/r02
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