Experimental study reveals gas pressure directly increases electrical resistivity in sputtered tungsten films, highlighting the critical role of plasma parameters during thin film deposition.
Tungsten coatings were deposited on silicon substrates by radio frequency (rf) magnetron sputtering from a metallic target in Ar atmosphere. The process parameters during the sputtering process were evaluated by a Langmuir probe, particularly, the electron density and electron temperature were measured by changing the rf power and gas pressure. The morphological and structural properties of the coatings were studied as a function of the pressure. Significant correlations were found between process parameters and characteristics properties of W coatings. The influence of deposition parameters on electrical properties was investigated. The electrical resistivity of the coatings was increased from 1.3 × 10−6 to 3 × 10−5 Ω m as the pressure increased as well.
No takes yet. Share an insight, caveat, or question.
Vassallo et al. (2023) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: