The Influence of Different Parameters on Capacitive Coupled Magnetron Sputtering Process

In this paper, experiments were carried out in a physical vapor deposition (PVD) chamber with DC magnetron and substrate RF system. With RF power increasing, it was found that film thickness gradually decreased and the thickness uniformity was maintained at a stable level. With the increase of dep time, the thickness increased and thickness uniformity was improved, while the overall sheet resistance (Rs) was stable at a level and the Rs uniformity gradually decreases. With the decrease of process position, the thickness of the deposited film decreased and thickness uniformity became better, while the Rs trended up and Rs uniformity trended down. This paper confirms the effect of RF power, dep time and H-T-Spacing on process, which is important for industrial development of wafer processes.