Numerical Study of Novel GaN HEMTs With Integrated SBDs for Ultrahigh Reverse Conduction Capability

This brief proposes novel integrated GaN high-electron-mobility transistor (HEMT) with multichannel Schottky barrier diode (SBD) structures to achieve ultrahigh reverse conduction capability and maintain the blocking characteristic at the same time. The simulative results indicate that the reverse voltage drop and reverse ON-state resistance can be reduced by 38.6% and 38% compared with the traditional metal–insulator–semiconductor HEMT, respectively. Meanwhile, the forward conduction capability, the blocking performances, and the capacitance characteristics are little influenced. Moreover, it is proved that the proposed devices also exhibit superior dynamic performances, indicating the application potential of reducing the power loss of power electronic systems. Finally, the key fabrication flows for the novel devices are presented and discussed.