HfO₂-Based Ferroelectric Optoelectronic Memcapacitors

We report one-capacitor (1C) architecture HfO2-based ferroelectric optoelectronic memcapacitors (FOMs), empowering with photoelectric perception and memory functions. Through the specially designed lightly doped semiconductor layer, the existence of photogenerated carriers can determine the non-volatile ferroelectric polarization switching under a certain positive pulse, thus realizing the capabilities of light perception and memory. Our HfO2-based FOMs demonstrate a capacitance memory window of 5.0 fF/ <tex-math notation="LaTeX">μ m^2 </tex-math> and a high/low capacitance ratio of 41, which can be maintained for <tex-math notation="LaTeX">4× 10^9 </tex-math> s and endure <tex-math notation="LaTeX">10^9 </tex-math> cycles stress. Such easy-to-implement yet hyper-integrable and CMOS compatible 1C-FOMs open up promising opportunities for next-generation edge computing and Internet of Things applications.