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April 5, 2022Semiconductor Science and Technology

The influence of lightly doped p-GaN cap layer on p-GaN/AlGaN/GaN HEMT

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Authors

KLKai LiuXidian UniversityRWRunhao WangCWChong WangQinghai University

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Liu et al. (2022) studied this question.

synapsesocial.com/papers/6a033b74f1675f581a756e8ehttps://doi.org/10.1088/1361-6641/ac643f
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Also Consider

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  1. 1Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT With AlGaN Cap-Layer2021 · 64 citations
  2. 2p -GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability2020 · 120 citations
  3. 3Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation2007 · 1,037 citations
  4. 4Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers2009 · 214 citations
  5. 530-W/mm GaN HEMTs by Field Plate Optimization2004 · 1,106 citations