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April 28, 2009IEEE Electron Device Letters

Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers

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Authors

SSS. Lawrence SelvarajAgency for Science, Technology and ResearchTSTakaaki SuzueNagoya Institute of TechnologyTETakashi EgawaNagoya Institute of Technology

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Selvaraj et al. (2009) studied this question.

synapsesocial.com/papers/6a611f967bdfcb316faabe14https://doi.org/10.1109/led.2009.2018288
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