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August 29, 2006IEEE Electron Device Letters

High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

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Authors

YDY. DoraFreedom Photonics (United States)ACA. ChakrabortyUniversity of CalcuttaLML. McCarthyPomona College

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Dora et al. (2006) studied this question.

synapsesocial.com/papers/69dbef4ed60f0b8828835ca8https://doi.org/10.1109/led.2006.881020
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