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/W in the full measured range, from 0.83-4.77 eV (1500-260 nm). The experimental results are compared with theoretical models for nonlinear absorption and refraction in indirect gap semiconductors, indicating the two-photon absorption as the dominant effect in the dispersion of the third-order nonlinear susceptibility. These data, together with optical Kerr gate measurements, also provided here, are of foremost relevance to the understanding of ultrafast optical processes in diamond and its nonlinear optical properties.
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Almeida et al. (2017) studied this question.
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