An emission-diffusion theory that describes MOSFETs from the ballistic to diffusive limits is developed. The approach extends the Crowell-Sze treatment of metal-semiconductor junctions to MOSFETs and is equivalent to the scattering/transmission model of the MOSFET. This paper demonstrates that the results of the transmission model can be obtained from a traditional, drift-diffusion analysis when the boundary conditions are properly specified, which suggests that the traditional drift-diffusion MOSFET models can also be extended to comprehend ballistic limits.
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Lundstrom et al. (2015) studied this question.
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