Growth and Characterization of AlInN Ternary Alloys in Whole Composition Range and Fabrication of InN/AlInN Multiple Quantum Wells by RF Molecular Beam Epitaxy

We studied on rf molecular beam epitaxy (RF-MBE) growth of AlInN ternary alloys on N-polarity GaN templates. The growable highest temperature for the AlInN ternary alloy with mid-composition range was about 600 °C, which was very similar to that of N-polarity InN epitaxy. The compositional and structural qualities of AlInN ternary alloys were quite poor, however, for growth temperatures above 580 °C. AlInN ternary alloys without apparent phase separation in the whole composition range could be grown at 550 °C, and their crystalline, electrical, and optical properties were characterized. The bowing parameter for the optical bandgap of AlInN ternary alloys was found to be 4.96±0.28 eV. Further we for the first time fabricated InN/AlInN multiple quantum wells (MQWs).