Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
July 10, 2003Applied Physics Letters

Effects of film polarities on InN growth by molecular-beam epitaxy

View Full Paper
Ask AI
Bookmark
Share

Authors

KXKe XuChengdu Medical CollegeAYA. YoshikawaKyoto University

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Xu et al. (2003) studied this question.

synapsesocial.com/papers/6a893e411fe1bad943eb18ddhttps://doi.org/10.1063/1.1592309
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Growth of High-Electron-Mobility InN by RF Molecular Beam Epitaxy2001 · 96 citations
  2. 2SURFACE MORPHOLOGY OF GaN SURFACES DURING MOLECULAR BEAM EPITAXY2000 · 17 citations
  3. 3Optical bandgap energy of wurtzite InN2002 · 730 citations
  4. 4Polarity inversion of GaN films by trimethyl–aluminum preflow in low-pressure metalorganic vapor phase epitaxy growth2002 · 37 citations
  5. 5Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy2000 · 197 citations