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Demonstrates favorable optoelectronic properties in copper-based solid solutions, suggesting potential applications.
by 2.4 eV. Their bandgaps were found to stem from valence and conduction band edges comprised of filled Cu 3d-based and empty Mo 4d-based states, respectively, with the W 5d-orbitals having negligible impact. Hence, these findings demonstrate the efficient synthesis of Cu(I)-molybdates/tungstates and their promising optoelectronic properties.
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Yadav et al. (2026) studied this question.
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