EPE contribution analysis method of multiple patterning lithography by Monte Carlo and Sobol sensitivity analysis

Fei Ai; Xiaojing Su; Yajuan Su; Yayi Wei

doi:10.1039/d6na00075d

January 1, 2026Nanoscale AdvancesOpen Access

EPE contribution analysis method of multiple patterning lithography by Monte Carlo and Sobol sensitivity analysis

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Key Points

This research aims to assess the edge placement error (EPE) contribution in multiple patterning lithography using sensitivity analysis methods.
Implemented Monte Carlo simulations to evaluate EPE contribution.
Applied Sobol sensitivity analysis for identifying key factors affecting EPE.
Focused on analyzing the impact of critical dimensions in semiconductor manufacturing.
Identified significant factors contributing to EPE variation.
Demonstrated a direct correlation between critical dimension reductions and increased EPE.
Achieved quantitative insights into process margins for better semiconductor design.

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Implication

Analyzes EPE in multiple patterning lithography, highlighting its importance in semiconductor technologies.

Abstract

As critical dimensions shrink in new semiconductor technologies, process margins become tighter. With the introduction of multiple patterning schemes, the edge placement error (EPE) analysis becomes more important than ever...

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Cite This Study

Ai et al. (2026) studied this question.

synapsesocial.com/papers/6a056751a550a87e60a1f40e https://doi.org/10.1039/d6na00075d

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EPE contribution analysis method of multiple patterning lithography by Monte Carlo and Sobol sensitivity analysis

Key Points

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Implication

Abstract

Discussion

Cite This Study

EPE contribution analysis method of multiple patterning lithography by Monte Carlo and Sobol sensitivity analysis

Key Points

Ask about this paper

Implication

Abstract

Discussion

Cite This Study

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