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Abstract Due to its powerful brain‐like parallel computing and efficient data processing capabilities, memristors are considered to be the core components for building the next generation of artificial intelligence systems. In this study, the CeO x /WO y heterojunction is employed as the functional layer, and various metal materials are utilized as the top electrode to fabricate the memristor. The results indicate that the memristive performance of the Ag/CeO x /WO y /ITO device can be improved by using Ag as the top electrode. By studying the conductivity mechanism of the device, a conductivity model is established that regulates oxygen vacancies and Ag conductive filaments. Furthermore, using the as‐prepared memristor, it is constructed four basic digital logic circuits: OR, AND, XOR, and XNOR, as well as a half adder and a full adder that can be used for digital arithmetic operations. Specifically, an odd/even checker is developed based on XOR and XNOR logic circuits to verify the correctness of data transmission. Finally, it is also designed and implemented a cryptographic array based on a memristor, which can be applied to encrypt and decrypt a series of numbers and images. Therefore, this work extends the application of memristor toward digital circuits, information transmission, data processing and image security encryption.
Wang et al. (Thu,) studied this question.