Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-Based RRAM

-based RRAM. We propose a model based on a series of charge transition processes that explains the drift and aggregation of vacancies during RS. The model was validated by experimental measurements where illuminated devices exhibit accelerated RS behaviors during SET and RESET. The activation energies of ion migration and charge transition were further experimentally determined through a transient current measurement, consistent with the modeling results. Our results help provide comprehensive understanding on the internal dynamics of RS and will benefit device optimization and applications.