Pulse Explorer nav.journalClub Débats Tendances Chercheurs

Join discussions, follow papers, and never miss your next session.

Download on theApp Store

Accueil Explorer nav.journalClub Tendances

⌘+K

January 1, 2020Open Access

View Full Paper

A comprehensive investigation of MoO3based resistive random access memory

JFJameela FatheemaThe University of Texas at Austin TSTauseef ShahidWenzhou University MMMohammad MohammadPetronas (Malaysia)

Key Points

Key points are not available for this paper at this time.

Abstract

based resistive random access memory devices for future data storage applications.

Demander à l'IA

Like

Bookmark

Share

View Full Paper

Demander à l'IA

Like

Bookmark

Share

View Full Paper

Cite This Study

Fatheema et al. (Wed,) studied this question.

synapsesocial.com/papers/6a06a8e5d9167a9c2a5823c0 https://doi.org/https://doi.org/10.1039/d0ra03415k

A comprehensive investigation of MoO3based resistive random access memory | Synapse

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM2007 · 139 citations
2Space-Charge-Limited Currents in Solids1955 · 1,745 citations
3Engineering chemically abrupt high-k metal oxide∕silicon interfaces using an oxygen-gettering metal overlayer2004 · 207 citations
4Optimized Ni Oxidation in 80-nm Contact Holes for Integration of Forming-Free and Low-Power Ni/NiO/Ni Memory Cells2009 · 89 citations
5(Invited) Understanding the Switching Mechanism in RRAM Devices and the Dielectric Breakdown of Ultrathin High-k Gate Stacks from First Principles Calculations2011 · 6 citations