Multilayer heterostructure engineering for high-purity and uniform area emission in perovskite quantum-dot light-emitting transistors

Key Points

• The study aims to enhance the uniformity and color purity of light emission in perovskite quantum-dot light-emitting transistors (LETs).
• Developed ZTO/perovskite QD heterojunction using interface engineering with PVK and Al2O3.
• Evaluated performance metrics such as color purity and transistor characteristics.
• Achieved uniform area emission at Rec.2020-level color purity.
• Maintained high-performance characteristics in the transistors.