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The band gap energy of TiO2 thin films declines from 3.39 eV to 3.20 eV as the annealing temperature increases from 400 to 800 °C. Novelty: ClaimNovelty.INCREMENTAL. Consensus alignment: ConsensusAlignment.NEUTRAL.

May 1, 2022Open Access

Annealing temperature variation and its influence on the self-cleaning properties of TiO2 thin films

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Abstract

declined from 3.39 eV to 3.20 eV as the binding temperature increased from 400 to 800 °C.

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