Annealing temperature variation and its influence on the self-cleaning properties of TiO2 thin films

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The band gap energy of TiO2 thin films declines from 3.39 eV to 3.20 eV as the annealing temperature increases from 400 to 800 °C. Novelty: ClaimNovelty.INCREMENTAL. Consensus alignment: ConsensusAlignment.NEUTRAL.

Valantine Takwa Lukong; Kingsley Ukoba; Kelvin O. Yoro; Tien‐Chien Jen

doi:10.1016/j.heliyon.2022.e09460

May 1, 2022HeliyonOpen Access

Annealing temperature variation and its influence on the self-cleaning properties of TiO2 thin films

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Abstract

declined from 3.39 eV to 3.20 eV as the binding temperature increased from 400 to 800 °C.

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Lukong et al. (2022) studied this question.

synapsesocial.com/papers/6a06c9ff05e809827fd3c1e6 https://doi.org/10.1016/j.heliyon.2022.e09460

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Annealing temperature variation and its influence on the self-cleaning properties of TiO2 thin films

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Annealing temperature variation and its influence on the self-cleaning properties of TiO2 thin films

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