Key points are not available for this paper at this time.
The growth of equimolar and non-equimolar HfNbTiVZr thin films deposited by DC magnetron sputtering deposition is investigated by in situ real time plasma monitoring with various surface analysis techniques. Plasma monitoring via optical emission spectroscopy revealed that low-energy deposition conditions led to an amorphous film under low-temperature deposition conditions. The equimolar system is sensitive to Ti losses during deposition, whereas the off-stochiometric case has significant V and Zr losses in the plasma phase at high Ar pressures. Crystallinity was induced in the HfNbTiVZr equimolar films by postdeposition annealing at 750 °C, whereas Hf0.75Nb0.75TiV1.25Zr1.25 maintained its amorphous state due to the larger δ parameter. By combining in situ monitoring of the deposition process through optical emission spectroscopy with X-ray photoelectron spectroscopy analysis of amorphous and crystalline films, it was confirmed that the oxidation was generated by chemical interactions with the ambient environment, to which the amorphous state was more susceptible to oxidation. • Optimization of HfNbTiVZr thin films by in situ real time plasma monitoring and surface analysis techniques • Optical emission spectroscopy showed that equimolar HfNbTiVZr has a sensibility to Ti transfer during deposition and non-equimolar HfNbTiVZr to V and Zr. • Crystallinity induced in the HfNbTiVZr thin films by annealing during deposition • Crystallization by post deposition annealing at 750°C depends strongly on δ parameter • Surface oxidation arises exclusively from environmental chemical interactions, with no oxidation during deposition or annealing processes.
Irimiciuc et al. (Mon,) studied this question.