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A state-of-the-art tunnel magnetoresistance (TMR) sensor architecture, which is based on the perpendicularly magnetized magnetic tunnel junction (pMTJ), is introduced and engineered for ultrafast, high thermal stability, and linearity for magnetic field detection. Limitations in high-frequency environments, stemming from insufficient thermal stability and slow recovery times in conventional TMR sensors, are overcome by this approach. The standard MRAM structure is modified, and the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction is employed to give a strong, internal restoring torque to the storage layer magnetization. Sensor linearity is also ensured by this RKKY mechanism, and rapid relaxation to the initial spin state is observed when an external field is removed. The structural and magnetic properties of the multilayer stack are experimentally demonstrated. Robust synthetic antiferromagnetic (SAF) coupling is confirmed by using polar MOKE spectroscopy with an optimal Ru insertion layer thickness (0.6 nm), which is essential for high thermal stability. Subsequently, an ultrafast response of this TMR sensor architecture is probed by micromagnetic simulations. The storage layer magnetization rapidly recovers to the SAF state within an ultrashort time of 5.78 to 5.99 ns. This sub-6 ns recovery time scale suggests potential operation into the hundreds of MHz range.
Cho et al. (Thu,) studied this question.