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(BTO) thin films with a GaN layer to form a heterojunction structure with a pyro-phototronic effect has achieved an efficient self-powered BTO/GaN ultraviolet photodetector (PD) with high responsivity and a fast response speed. With cooling and prepolarization treatments, the photocurrent peak and plateau have been enhanced by up to 1348 and 1052%, and the response time of the pyroelectric and common photoelectric current are improved from 0.35 to 0.16 s and from 3.27 to 2.35 s with a bias applied, respectively. The self-powered BTO/GaN PD combined with a pyro-phototronic effect provides a new idea and optimization for realizing ultrafast ultraviolet sensing at room temperature, making it a promising candidate in environmentally friendly and economical ultraviolet optoelectronic devices.
Zhang et al. (Wed,) studied this question.