On the Characterization and Separation of Trapping and Ferroelectric Behavior in HfZrO FET

N-channel FETs with ferroelectric (FE) HfZrO gate oxide are fabricated, showing steep subthreshold slope under certain conditions. Possible origins of I D -V G hysteresis, the hysteresis versus subthreshold slope tradeoff, dependence on the bias voltage and temperature and the competition between trapping and FE behavior are reported and discussed. A band of active traps in the FE layer responsible for charge trapping during device operation is characterized. Transient I D -V G measurements are introduced to facilitate differentiating between trapping and FE behavior during subthreshold slope measurements.