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April 24, 2006Applied Physics Letters

High critical electric field of AlxGa1−xN p-i-n vertical conducting diodes on n-SiC substrates

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ANAtsushi NishikawaOsaka University of EconomicsKKKazuhide KumakuraHokkaido UniversityTATetsuya AkasakaMeisei University

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Nishikawa et al. (2006) studied this question.

synapsesocial.com/papers/6a07d11273bf37127155d5e8https://doi.org/10.1063/1.2198092
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