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Experimental method for determining the atomistic details of the quantum-well interface | Synapse

May 16, 20260 citationsOpen Access

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Experimental method for determining the atomistic details of the quantum-well interface

SRSiddarth RastogiIndian Institute of Technology Bombay SSSounak SamantaIndian Institute of Technology Bombay VJVarsha JangirIndian Institute of Technology Bombay

Key Points

This work aims to investigate the atomistic details of quantum-well interfaces in Si/SiGe systems.
Conducted Hall-bar measurements on Si/SiGe quantum wells.
Measured carrier-density and mobility.
Analyzed Shubnikov–de Haas oscillations and the anomalous Hall response.
Observed significant Shubnikov–de Haas oscillations indicating quantized energy levels.
Determined carrier density and mobility values, suggesting efficient charge transport.
Estimated valley-splitting, indicating potential applications in quantum computing.

Abstract

This record contains the short conference manuscript and poster submitted/presented for QCMC 2024. The work reports Hall-bar measurements on Si/SiGe quantum wells, including carrier-density, mobility, Shubnikov–de Haas oscillations, anomalous Hall response, and discussion of valley-splitting estimation.

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Cite This Study

Rastogi et al. (Mon,) studied this question.

synapsesocial.com/papers/6a080b38a487c87a6a40d6fe https://doi.org/https://doi.org/10.5281/zenodo.20187748