The absorption of infrared light associated with the presence of free carriers in germanium has been measured by injecting these carriers across a p-n junction at room temperature. The absorption is found to be proportional to the concentration of carriers. The absorption as a function of wavelength shows the same rather sharp maxima previously observed in normal p-type germanium. These bands are found to change with temperature. An explanation of this absorption is offered in terms of a degenerate energy band scheme.
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Briggs et al. (1953) studied this question.
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