What question did this study set out to answer?

Establish a mathematical and physical theory describing potential distribution, carrier transport, and rectification across semiconductor p-n junctions and junction transistors.

July 1, 1949Bell System Technical Journal

The Theory ofp-nJunctions in Semiconductors andp-nJunction Transistors

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Authors

WSW. ShockleyUniversity of North Carolina at Chapel Hill

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Overview

Theoretical analysis demonstrates potential distribution and carrier diffusion in single-crystal semiconductors, highlighting the physical mechanisms governing solid-state junction transistors.

Key Points

Establish a mathematical and physical theory describing potential distribution, carrier transport, and rectification across semiconductor p-n junctions and junction transistors.
Formulated analytical equations for electrostatic potential distribution and current rectification with an emphasis on single-crystal germanium.
Modeled minority carrier transport mechanics driven by hole diffusion in n-type regions and electron diffusion in p-type regions.
Showed that alternating-current junction admittance varies proportionally with (1 + iωτ_p)^(1/2), where τ_p represents the hole lifetime in the n-region.
Demonstrated that non-current-carrying contact potentials emerge across p-n junctions during carrier injection, providing the operational mechanism for p-n-p transistors.

Cite This Study

W. Shockley (1949) studied this question.

synapsesocial.com/papers/69ffe3ace92f4a033c8537fe https://doi.org/10.1002/j.1538-7305.1949.tb03645.x

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July 1, 1949Bell System Technical Journal

The Theory ofp-nJunctions in Semiconductors andp-nJunction Transistors

View Full Paper

Ask AI

Bookmark

Authors

WSW. ShockleyUniversity of North Carolina at Chapel Hill

Discussion

Member takes

Overview

Theoretical analysis demonstrates potential distribution and carrier diffusion in single-crystal semiconductors, highlighting the physical mechanisms governing solid-state junction transistors.

Key Points

Establish a mathematical and physical theory describing potential distribution, carrier transport, and rectification across semiconductor p-n junctions and junction transistors.
Formulated analytical equations for electrostatic potential distribution and current rectification with an emphasis on single-crystal germanium.
Modeled minority carrier transport mechanics driven by hole diffusion in n-type regions and electron diffusion in p-type regions.
Showed that alternating-current junction admittance varies proportionally with (1 + iωτ_p)^(1/2), where τ_p represents the hole lifetime in the n-region.
Demonstrated that non-current-carrying contact potentials emerge across p-n junctions during carrier injection, providing the operational mechanism for p-n-p transistors.

Cite This Study

W. Shockley (1949) studied this question.

synapsesocial.com/papers/69ffe3ace92f4a033c8537fe https://doi.org/10.1002/j.1538-7305.1949.tb03645.x

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