Junction Potential Studies in Tunnel Diodes

This is the authors' abstract. We don't add key points for this paper.

A unique model is proposed for the potential distribution in the junction region of a tunnel diode. The essential feature of this model, in addition to band tailing, is a discontinuity in the band edges at the n-p interface arising from a difference in the electron affinities of degenerate n- and p-type semiconductors. In connection with the proposed description of a tunnel diode junction, precise capacitance measurements have been carried out on a series of germanium units at 78^∘{}K. The experimentally determined values of the capacitance built-in voltage are in substantial agreement with the theoretical prediction, eVb=Eg0+1/5(ξₙ+ξₚ), and thus lend strong support to the validity of the discontinuity model. The temperature dependence of the built-in voltage is also discussed.