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A delta-doped InGaAs-GaAs quantum well (QW) has been grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The full width at half maximum (FWHM) of the doping profile analyzed by capacitance-voltage measurements is less than 30 A and is comparable to those produced by molecular beam epitaxy (MBE) or chemical beam epitaxy (CBE). Two kinds of delta-doping interband tunneling diodes with band diagrams similar to those of InAs/AlSb-GaSb related interband tunneling diodes have been fabricated.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Su et al. (1993) studied this question.
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