We have demonstrated diffraction from Si(111) crystal using x rays from highly ionized Ar ions produced by laser irradiation with an intensity of 6×1018W∕cm2 and a pulse duration of 30 fs acting upon micron-sized Ar clusters. The measured total photon flux and linewidth in the Heα1 line (3.14 keV) were 4×107photons∕shot∕4πsr and 3.7 eV (full width at half maximum), respectively, which is sufficient to utilize as a debris-free light source for time-resolved x-ray diffraction studies.
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Fukuda et al. (2004) studied this question.
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