We report on the observation of a morphological defect structure, ‘‘cross-hatch’’ and the experimental circumstances that lead to its occurence during GaAs homoepitaxy. Photoluminescence, x-ray diffraction and transmission electron miscroscopy (TEM) results obtained on cross-hatched samples are presented and discussed in regards to the nature and origin of the defect structure.
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Cunningham et al. (1986) studied this question.
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