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GaAs-Al x Ga 1-x As double-heterostructure (DH) lasers with Si-doped n-type active layers have been prepared by molecular-beam epitaxy (MBE) and the laser properties evaluated. With 0. 2-μm-thick active layers and 300-μm cavity lengths, typical room-temperature threshold current densities J th of 5. 0 10^3 A/cm 2 and best values of 2. 5 10^3 A/cm 2 have been obtained. Stripe-geometry devices were run CW up to 9°C. Photoluminescence (PL) studies of single layers grown with the donors Si, Ge, and Sn show that the luminescent intensity for MBE n-type layers depends on the substrate temperature during growth. The PL intensity for Sn-doped MBE layers was greater than for high-quality Sn-doped liquid-phase-epitaxial layers.
Casey et al. (Tue,) studied this question.