Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
June 1, 1970Journal of Applied Physics

Electron Mobility in High-Purity GaAs

View Full Paper
Ask AI
Bookmark
Share

Authors

CWC. M. WolfeON Semiconductor (United States)GSG. E. StillmanUniversity of Illinois Urbana-ChampaignWLW.T. LindleyMIT Lincoln Laboratory

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Wolfe et al. (1970) studied this question.

synapsesocial.com/papers/6a095bca00217ed3fb33f2bbhttps://doi.org/10.1063/1.1659368
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Neutral Impurity Scattering in Semiconductors1950 · 692 citations
  2. 2Low-Temperature Elastic Constants of Gallium Arsenide1962 · 105 citations
  3. 3Deformation Potentials and Mobilities in Non-Polar Crystals1950 · 3,894 citations
  4. 4Preparation and Properties of Epitaxial Gallium Arsenide1969 · 40 citations
  5. 5Transport Properties of a Many-Valley Semiconductor1955 · 546 citations