Negative Differential Resistance of Strain-Free InGaAs/AlAsSb Resonant Tunneling Barrier Structures Lattice-Matched to InP

We grew AlAsSb/InGaAs(4.40 nm) resonant tunneling barrier structures lattice-matched to InP substrates using molecular beam epitaxy. Peak-to-valley current ratios exceeding 10 at room temperature were achieved for the first time with fully lattice-matched resonant tunneling barrier structures (15 with a peak current density, J p , of 2.37×10 3 A/cm 2 and 11 with J p of 1.51×10 4 A/cm 2 ). These values are comparable to peak-to-valley current ratios in InGaAs/AlAs pseudomorphic resonant tunneling barrier structures with corresponding peak current densities.