GRINSCH GaAs/AlGaAs laser structures grown by OMVPE using a novel aluminium source

GRINSCH GaAs/AlGaAs laser structures grown by OMVPE using a novel aluminium source, trimethylamine alane, have been successfully fabricated. Broad-area lasers made from the material have a threshold current density of 200 A cm−2. A V-grooved laser with a monolithically integrated intracavity loss modulator was used to vary the threshold current from Ith = 15 mA at an absorber voltage of VS = 2.5 V to Ith = 210 mA for VS = −2.5 V.