We report molecular beam epitaxial (MBE) growth of AlGaAs in the previously unexplored temperature range exceeding 800 °C for which excellent material can be achieved. Photoluminescence reveals bound excitonic linewidth as sharp as 3.6 meV, which is among the narrowest ever reported for material of equivalent Al mole fraction. In this temperature range carbon impurity concentrations are found to be dramatically reduced while temperature-dependent data provide information from which an understanding of carbon incorporation during MBE growth emerges.
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Cunningham et al. (1987) studied this question.
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