Resonant tunnelling diodes consisting of an MBE-grown AlInAs barrier on each side of a lattice-matched GaInAs well have been fabricated. Current peak/valley ratios up to 7.1 and 39 have been measured at 300 K and 77K, respectively. These represent the largest values reported to date in any double-barrier, single-well device. The enhanced peak/valley ratio has been attributed to thick barriers (72 Å) and wide, undoped GaInAs spacer layers (400 Å).
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Lakhani et al. (1988) studied this question.