Ruthenium Oxide Film Electrodes Prepared at Low Temperatures for Electrochemical Capacitors

Ruthenium oxide films were grown on metal substrates at temperatures from 100 to 300°C using a ruthenium ethoxide solution as the precursor. The amorphous phase and highly porous ruthenium oxide films were formed at temperatures of 200°C and lower. A specific capacitance of 593 F/g and an interfacial capacitance of 4 were measured from a single-cell capacitor made with ruthenium oxide film electrodes prepared at 200°C. The specific capacitance as a function of temperature and film thickness was studied. A comparison of the surface morphology and electrochemical properties for ruthenium oxide film electrodes made by the ruthenium ethoxide precursor and the ruthenium chloride precursor was also made. © 2001 The Electrochemical Society. All rights reserved.