FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

This is the authors' abstract. We don't add key points for this paper.

MOSFETs with gate length down to 17 nm are reported. To suppress the short channel effect, a novel self-aligned double-gate MOSFET, FinFET, is proposed. By using boron-doped Si/sub 0.4/Ge/sub 0.6/ as a gate material, the desired threshold voltage was achieved for the ultrathin body device. The quasiplanar nature of this new variant of the vertical double-gate MOSFETs can be fabricated relatively easily using the conventional planar MOSFET process technologies.