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Design and evaluate a silicon condenser microphone fabricated using a single-wafer sacrificial layer process that eliminates the need for wafer bonding.

January 1, 1992Journal of Microelectromechanical SystemsOpen Access

Fabrication of silicon condenser microphones using single wafer technology

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Design and evaluate a silicon condenser microphone fabricated using a single-wafer sacrificial layer process that eliminates the need for wafer bonding.
Fabricated microphones on a single wafer using a sacrificial layer technique.
Formed a 1-µm PECVD silicon nitride backplate perforated with 120–525 acoustic holes/mm² and coated with a thin Ti/Au electrode.
Achieved a flat frequency response spanning 100 Hz to 14 kHz with reproducible sensitivities of 1–2 mV/Pa.
Attained functional acoustic sensitivity using relatively low bias voltages between 6 V and 16 V without requiring wafer bonding.

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Implication

Experimental study demonstrates single-wafer fabrication of silicon condenser microphones with flat broadband response, indicating simplified manufacturing without wafer bonding.

Cite This Study

Scheeper et al. (1992) studied this question.

synapsesocial.com/papers/6a0b6affbc3a95fa09c30bd4 https://doi.org/10.1109/84.186394

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Implication

Experimental study demonstrates single-wafer fabrication of silicon condenser microphones with flat broadband response, indicating simplified manufacturing without wafer bonding.

Fabrication of silicon condenser microphones using single wafer technology

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Discussion

Implication

Cite This Study

Fabrication of silicon condenser microphones using single wafer technology

Key Points

Discussion

Implication

Cite This Study

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