19·9%‐efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factor

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Abstract We report a new record total‐area efficiency of 19·9% for CuInGaSe 2 ‐based thin‐film solar cells. Improved performance is due to higher fill factor. The device was made by three‐stage co‐evaporation with a modified surface termination. Growth conditions, device analysis, and basic film characterization are presented. Published in 2008 by John Wiley & Sons, Ltd.

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Ingrid Repins

National Renewable Energy Laboratory

Miguel Á. Contreras

Universidad Autónoma de Guadalajara

Brian Egaas

National Renewable Energy Laboratory

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Progress in Photovoltaics Research and Applications

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National Renewable Energy Laboratory

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Repins et al. (Thu,) studied this question.

synapsesocial.com/papers/6a0ccf23243f79c7af34c6e3 — DOI: https://doi.org/10.1002/pip.822

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CuIn(Ga)Se2-based devices via a novel absorber formation process· 2000 · 36 citations
Chalcopyrite/defect chalcopyrite heterojunctions on the basis of CuInSe2· 1993 · 612 citations
Diode quality factor determination for thin-film solar cells· 1989 · 273 citations
Preparation of Device-Quality Cu(In, Ga)Se<sub>2</sub> Thin Films Deposited by Coevaporation with Composition Monitor· 1995 · 152 citations
Study of the effect of gallium grading in Cu(In,Ga)Se 2· 2000 · 135 citations

Also consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

CuIn(Ga)Se2-based devices via a novel absorber formation process· 2000 · 36 citations
Chalcopyrite/defect chalcopyrite heterojunctions on the basis of CuInSe2· 1993 · 612 citations
Diode quality factor determination for thin-film solar cells· 1989 · 273 citations
Preparation of Device-Quality Cu(In, Ga)Se<sub>2</sub> Thin Films Deposited by Coevaporation with Composition Monitor· 1995 · 152 citations
Study of the effect of gallium grading in Cu(In,Ga)Se 2· 2000 · 135 citations

19·9%‐efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factor

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