We formulate a consistent defect chemical model of the effect of air/O2 anneals on CdS/CuInSe2 devices. The model centers on O-induced neutralization of (near) surface donor states in CuInSe2 grains. The simplest identification of these states is with ionized Se vacancies, due to coordinatively unsaturated In on grain surfaces and boundaries.
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Cahen et al. (1989) studied this question.
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